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哈尔滨师范大学物理与电子工程学院,黑龙江哈尔滨,150000;
摘要:古斯-汉欣(GH)位移是光束在界面发生全反射时产生的横向位移,是重要的光学现象。本研究以图案化α-MoO3/一维介电光栅超表面结构来研究其反射波GH位移和反射率。理论分析表明,超表面结构可以产生较大负GH位移并伴有高反射率,电场主要局域在结构表面。GH位移的增强源于图案化α‑MoO₃/介质光栅层超表面导模共振的激发。通过调节入射角和α-MoO₃厚度,可调控GH位移峰值大小。优化介质光栅厚度能在不显著改变GH峰值的同时提升反射率。基于α‑MoO₃的介质光栅结构可实现可控且增强的GH位移,在光学传感器、光电子探测器等领域具有应用潜力。
关键词:双曲超材料;古斯 - 汉欣位移;α相三氧化钼;介质光栅
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